Italy's Enel Green Power (EGP) and France's Institut National De L'energie Solaire (INES) at French Alternative Energies and Atomic Energy Commission (CEA) have reported 24.47% efficiency for an industrial-sized Ga-doped P-type silicon heterojunction (HJT) using a LONGi Green Energy Technology made wafer.
Without sharing too many details about the feat, the partners said they achieved it using the same manufacturing processes as the N-type.
Certified by Germany's Institute for Solar Energy Research Hamelin (ISFH) Caltec, this is the 2nd highest efficiency for industrial sized silicon cells using P-type silicon wafers of any technology, according to the research partners.
"A new way of manufacturing P-type Cz wafers has recently been deployed on a large scale by replacing boron doping with gallium (Ga) doping at no extra cost, making them insensitive to degradation phenomena under light," explain the duo. "A recent study[2] indicates that P-type heterojunction cells should have an efficiency gap of less than 0.4% absolute to be competitive with N-type heterojunctions."
EGP and CEA-INES said they will reveal more details about the efficiency record during 8th World Photovoltaic Power Conversion Conference WCPEC in Milan in September 2022.
Previously, both the partners reported 25% HJT solar cell efficiency in August 2020 on an active area of 213 cm² on M2 wafer on CEA's industrial pilot line.
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