24.47% Efficiency For P-Type HJT Cell
EGP & INES-CEA Claim 2nd Highest Efficiency For Industrial Sized Silicon Cells For P-Type Wafer
Italy’s Enel Green Power (EGP) and France’s Institut National De L’energie Solaire (INES) at French Alternative Energies and Atomic Energy Commission (CEA) have reported 24.47% efficiency for an industrial-sized Ga-doped P-type silicon heteroju.
JA Solar Secures IP Rights For Ga-Doped Silicon Wafers
Shin-Etsu Chemical Grants Intellectual Property Rights, Valid In Various Nations, Over Ga-Doped Silicon Wafers To JA Solar For Use In Solar Cell Applications
Chinese solar module company JA Solar Co., Ltd. has secured intellectual property (IP) rights from Shin-Etsu Chemical of Japan to use the latter’s Ga-doped silicon wafer technology for solar cell applications.
