47.6% Efficiency World Record Solar Cell
Fraunhofer ISE Touts World’s Most Efficient Solar Cell Based on Four-Junction III-V With 47.6% Efficiency
German photovoltaic research institute Fraunhofer Institute for Solar Energy Systems (ISE) has achieved 47.6% efficiency for a four-junction III-V solar cell, using a new anti-reflection coating calling it the world’s most efficient solar cell.
39.5% Efficiency For Triple-Junction Solar Cells
NREL Claims Highest Efficiency 1-Sun Solar Cell Using Quantum Wells
The National Renewable Energy Laboratory (NREL) has announced 39.5% efficiency for a new solar cell it has created calling it the highest efficiency solar cell of any type, measured using standard-1 sun conditions.
25.9% Efficiency For III-V/Si Tandem Solar Cell
Fraunhofer ISE Reports 25.9% Power Conversion Efficiency For III-V/Si Tandem Cell Grown Directly On Silicon, Beating Previous Efficiency Of 24.3% In Less Than A Year
Germany’s Fraunhofer Institute for Solar Energy Systems (ISE) has reported a new record efficiency of 25.9% for a III-V/Si tandem cell grown directly on silicon.
NREL Solar Tech Finds Support In US Air Force
US Air Force Research Laboratory Backing NREL Efforts To Bring Down Manufacturing Costs Of III-V High Efficiency Solar Cells Using D-HVPE Technology; Kyma Technologies & Ceres Technologies Joins Hands Too
The US Air Force Research Laboratory (AFRL) is investing in a National Renewable Energy Laboratory (NREL) solar cell technique to help bringing down manufacturing costs of III-V high efficiency solar cells so these can be used for widespread install.
34.1%: Monolithic Triple-Junction Solar Cell Efficiency
Fraunhofer ISE Achieves 34.1% Efficiency Level For Monolithic Triple-Junction & 24.3% Efficiency For III-V Semiconductor Layers Silicon Solar Cells
Fraunhofer ISE has achieved a new record efficiency level for silicon based solar cells, reaching 34.1% for a monolithic triple-junction solar cells.
Fraunhofer ISE Reports 22.3% Efficiency
Fraunhofer ISE Reports 22.3% Efficiency Record For Multi-Junction Solar Cell With Silicon & III-V Semiconductor Materials Using Direct Growth Approach
Germany’s Fraunhofer ISE has reported a new efficiency record of 22.3% for a multi-junction solar cell using silicon and III-V semiconductor materials. It stresses that III-V layers were directly grown on the silicon.
Hanergy: 28.9% GaAs Module Efficiency Record
NREL Approves 28.9% Conversion Efficiency For Single Junction GaAs Module Achieved By Hanergy’s US Subsidiary Alta Devices
Hanergy Thin Film Power Group, a Chinese manufacturer of PV thin-film equipment and modules, has announced 28.9% conversion efficiency for single junction GaAs module made by its US located subsidiary Alta Devices.
MicroLink: 37.75% ELO GaAs Cell Efficiency
MicroLink Devices Achieves 37.75% Power Conversion Efficiency For 3-Junction Epitaxial Thin-Film Solar Cell On GaAs Substrate
US based technology company MicroLink Devices says it has achieved a 37.75% power conversion efficiency for a three-junction epitaxial lift-off (ELO) thin-film solar cell.
