- EGP and INES-CEA have announced 24.47% efficiency for industrial-sized Ga-doped P-type silicon HJT cell
- They claim it to be the 2nd highest efficiency for industrial sized silicon cells using P-type silicon wafer of any technology
- The team will share details about the feat achieved using LONGi’s wafer, in September 2022
Italy’s Enel Green Power (EGP) and France’s Institut National De L’energie Solaire (INES) at French Alternative Energies and Atomic Energy Commission (CEA) have reported 24.47% efficiency for an industrial-sized Ga-doped P-type silicon heterojunction (HJT) using a LONGi Green Energy Technology made wafer.
Without sharing too many details about the feat, the partners said they achieved it using the same manufacturing processes as the N-type.
Certified by Germany’s Institute for Solar Energy Research Hamelin (ISFH) Caltec, this is the 2nd highest efficiency for industrial sized silicon cells using P-type silicon wafers of any technology, according to the research partners.
“A new way of manufacturing P-type Cz wafers has recently been deployed on a large scale by replacing boron doping with gallium (Ga) doping at no extra cost, making them insensitive to degradation phenomena under light,” explain the duo. “A recent study indicates that P-type heterojunction cells should have an efficiency gap of less than 0.4% absolute to be competitive with N-type heterojunctions.”
EGP and CEA-INES said they will reveal more details about the efficiency record during 8th World Photovoltaic Power Conversion Conference WCPEC in Milan in September 2022.
Previously, both the partners reported 25% HJT solar cell efficiency in August 2020 on an active area of 213 cm² on M2 wafer on CEA’s industrial pilot line.
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