Japanese Power Electronic Maker Expands 2-Pack Circuit IGBT Module

• Fuji Electric launches 4 models of its latest high-capacity HPnC series IGBT modules
• Its latest modules offer a maximum current carrying capacity of 1,800 A and a maximum breakdown voltage of 2,300 V DC
• The improved current carrying and breakdown voltage ensures high-capacity PCS in a reduced footprint, suitable for solar and wind energy generation applications

Tokyo-headquartered Fuji Electric (FE) has expanded its 2-pack circuit high-capacity industrial Insulated Gate Bipolar Transistor (IGBT) module under the HPnC series, suitable for renewable energy power conversion systems (PCS). IGBT modules play the role of changing frequencies and voltages by switching electricity on and off. The 2-pack half-bridge circuit consists of 2 IGBTs in a half-bridge configuration with each transistor having a super-fast recovery free-wheel diode (FWD).

FE is offering 3 HPnC series models covering the input current range of 1,200 A to 1,800 A under a maximum DC breakdown voltage of 1,700 V, albeit its 2,300 V DC breakdown voltage category offers only one model with a maximum input current of 1200 A. All the models under the HPnC family have identical dimensions of 100 x 144 x 40 mm. Along with its latest generation IGBT chips and high heat dissipation materials, the module comes with an optimized internal terminal and chip layout. FE says this eventually improves the current density per unit area. This leads to an industry-leading maximum rated current capacity of 1,800 A, an increase of 80% compared to the company's existing products, it claims.

Along with improving the current carrying capacity, the Japanese company says with these new products, it has responded to today's PCS design of a higher DC operating system voltage of 1,500 V for connection with large-scale power generation systems. The company explains that the rated voltage required for an IGBT module installed on a 1,500 V DC power converter is equal to or more than 2,000 V, which leads to 2 IGBT modules with a rated voltage of 1,200 V or 1,700 V connected in series. Acknowledging this challenge, FE has optimized the breakdown voltage structure of the IGBT and FWD chips with a maximum breakdown voltage of 2,300 V DC. This improved current carrying capacity/unit area and high maximum breakdown voltage enables higher capacity PCS with a single IGBT module that supports a 1,500 V DC power converter in a reduced footprint. Thus, the number of power converters installed in a large-scale solar plant can be reduced by improving the inverter capacity, which reduces power generation costs. HPnC series IGBT modules are expected to be available in the market by June 2024, the company confirms.