- LONGi has reported achieving 25.47% efficiency for large size Gallium-doped P-type HJT cell
- It uses M6 monocrystalline wafer size 3cm² for the same, which has been validated by ISFH Germany
- The company deployed proprietary P-type wafer processing solution for HJT cells, combining it with interface passivation technology for a Voc of 747.6 mV
Vertically integrated solar PV company from China LONGi Solar has claimed to have achieved a ‘new world record’ power conversion efficiency of 25.47% for large size Gallium-doped P-type heterojunction (HJT) solar cell on M6 monocrystalline wafer size.
The manufacturer says the efficiency achieved on full size 274.3cm² wafer was validated through testing carried out at the Institute for Solar Energy Research in Hamelin (ISFH) in Germany.
The Chinese company said it has developed a P-type wafer processing solution for HJT cells and combined it with interface passivation technology to achieve a Voc of 747.6 mV for these cells. It added that the processing of the low-cost P-HJT cell solution for this record has not yet been fully optimized. It is convinced though that this technology route has great potential for further development.
LONGi’s announcement follows the news of 24.47% efficiency for Ga-doped P-type silicon HJT cell reported by Enel Green Power and Institut National De L’energie Solaire (INES) recently, which was achieved using a LONGi Green Energy Technology made wafer (see 24.47% Efficiency For P-Type HJT Cell).
Previously, in 2021 LONGi reported 26.30% efficiency for N-type HJT cells (see 26.30% Efficiency For LONGi’s HJT Solar Cell).
Day 2 of TaiyangNews High Efficiency Solar Technologies Conference in December 2021 discussed how the solar PV industry is gearing up for microcrystalline silicon HJT technology but coordinated efforts are needed to lower its costs (see Day 2: High Efficiency Solar Technologies).
