Fraunhofer ISE: 68.9% Efficiency For GaAs PV Cell
Fraunhofer ISE Researchers Achieve 68.9% As ‘Highest’ Efficiency For III-V GaAs Solar PV Cell, Using Laser Light & Highly Reflective Mirror
Thursday, 01 Jul 2021
A research team at Germany’s Fraunhofer ISE has claimed to have achieved the highest efficiency to date at 68.9% for a III-V semiconductor solar PV cell based on gallium arsenide (GaAs), by exposing it to laser light of 858 nanometers.
19.9% Efficiency For Ultrathin Solar Cell
Center For Nanosciences & Nanotechnologies Along With Fraunhofer ISE Report 19.9% Efficiency For Ultrathin GaAs Solar Cell; Believe Potential For 25% Efficiency
Friday, 09 Aug 2019
Research teams at the French Center for Nanosciences and Nanotechnologies (C2N) and Germany’s Fraunhofer ISE have reported achieving 19.9% of power conversion efficiency for solar cells made with an ultrathin absorbing layer of 205 nm-thick galliu.
Alta Devices Achieves 29.1% Solar Cell Efficiency
29.1% Power Conversion Efficiency By Hanergy’s Alta Devices For Single Junction Solar Cell Secures Fraunhofer ISE CalLab Certification; NASA Selects Company’s Technology At International Space Station For Possible On-Orbit Exposure Impact
Sunday, 16 Dec 2018
Alta Devices has achieved 29.1% power conversion efficiency for its single junction GaAs solar cell technology, which has caught the attention of US National Aeronautics and Space Administration (NASA).
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